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RFD14N05L, RFD14N05LSM
Typical Performance Curves
1.2
Unless Otherwise Specified
16
1.0
12
0.8
0.6
8
0.4
4
0.2
0
0
25
50 75 100 125
T C , CASE TEMPERATURE ( o C)
150
175
0
25
50
75 100 125
T C , CASE TEMPERATURE ( o C)
150
175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE
TEMPERATURE
2
1
0.5
0.2
FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE
P DM
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
t 1
t 2
NOTES:
DUTY FACTOR: D = t 1 /t 2
0.01
10 -5
10 -4
10 -3
10 -2
10 -1
PEAK T J = P DM x Z θ JC x R θ JC + T C
10 0
10 1
t, RECTANGULAR PULSE DURATION (s)
FIGURE 3. NORMALIZED MAXIMUM TRANSIENT THERMAL IMPEDANCE
100
T C = 25 o C
T J = MAX. RATED
200
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
FOR TEMPERATURES
ABOVE 25 o C DERATE PEAK
CURRENT AS FOLLOWS:
100 μ s
100
I
= I 25
175 - T C
150
10
1ms
10 -4
1
0.5
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r DS(ON)
10
10ms
100ms
DC
100
10
10
T C = 25 o C
-5
V GS = 5V
V GS = 10V
10 -3
10 -2
10 -1
10 0
10 1
V DS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA
?2004 Fairchild Semiconductor Corporation
t, PULSE WIDTH (s)
FIGURE 5. PEAK CURRENT CAPABILITY
RFD14N05L, RFD14N05LSM Rev. C0
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